Researchers at MIT have successfully manipulated the magnetic properties of an antiferromagnetic material using terahertz pulses, opening up new avenues for next-generation memory storage technologies.
Researchers at MIT have successfully induced a new magnetic state in an antiferromagnetic material using terahertz pulses. The team, led by Nuh Gedik, used a terahertz source to excite the atoms’ collective vibrations, which caused them to become magnetized and create a preferred orientation of spins. This effect, called terahertz field-induced metastable magnetization, was observed in FePS3, a material that is typically nonmagnetic.
The researchers achieved this by directing a beam of near-infrared light through an organic crystal to generate terahertz frequencies, which were then directed at the sample. The team confirmed the effect by observing a difference in the intensity of two near-infrared lasers aimed at the sample with opposite circular polarization.
This breakthrough has significant implications for the development of next-generation memory storage technologies, as antiferromagnets can be used to store data. By inducing this new magnetic state, researchers may be able to optimize the use of antiferromagnets and improve their performance in these applications.
The research was supported by the U.S. Department of Energy and the Gordon and Betty Moore Foundation, among other organizations. The study’s findings were published in a paper titled “Terahertz field-induced metastable magnetization near criticality in FePS3”.
